inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon npn power transistor 3DD15 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) dc current gain- : h fe = 30~250(min.)@i c = 2a collector-emitter saturation voltage- : v ce(sat )= 1.5v(max)@ i c = 2.5a applications designed for b&w tv horizontal output , regulated power supply and power amplifier applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a p c collector power dissipation@t c =75 50 w t j junction temperature 175 t stg storage temperature -55~175
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon npn power transistors 3DD15 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 100 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 150 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2.5a; i b = 0.25a 1.5 v i ceo collector cutoff current v ce = 50v; i b =0 1.0 ma i cbo collector cutoff current v cb = 50v; i e =0 0.5 ma h fe dc current gain i c = 2a; v ce = 10v 120 180 t f fall time i c = 3a; i b1 = 0.2a, i b2 = -0.3a, 1.0 s
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